SiC power modules maximize switching efficiency


Microchip expanded its SiC power electronics family with new modules that deliver efficiency, size, and reliability improvements

By Gina Roos,

Microchip Technology Inc. has expanded its portfolio of silicon carbide (SiC) power electronics with smaller, lighter, and more efficient SiC power modules. These
include commercially qualified Schottky barrier diode (SBD)-based power modules in 700-V, 1,200-V, and 1,700-V variants. Topologies available include dual-diode, full-bridge, phase-leg, dual-common-cathode, and three-phase-bridge, along with different current and package options.

The SiC SBD modules simplify designs by integrating multiple SiC diode die with the option to mix and match substrate and baseplate material into a single module, said Microchip, which maximizes switching efficiency, reduces thermal rise, and shrinks
the system footprint.


The 700-V, 1,200-V, and 1,700-V SiC SBD modules use Microchip’s newest generation of SiC die, which maximizes system reliability and ruggedness. In addition, the devices’ high-avalanche performance can reduce the need for snubber circuits, and the body diode stability allows designs to use the
internal body diode without long-term degradation.

The SiC SBD modules are available now. Microchip’s complete SiC
is supported by a range of SiC SPICE models, SiC driver board reference designs, and a Vienna PFC reference design.


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